Infineon CC80QSG反激拓扑电压模式电源控制方案

Infineon公司的CC80QSG是反激拓扑电压模式控制器,工作在准谐振模式和谷开关DCM,以获得功率转换在宽工作范围内的高效率.对于电池充电应用,IC器件提供宽功率范围和广泛综合的保护.器件很容易提供设计,需要最低限度的外接元件.栅极驱动器可使采用最新的MOSFET设计高达130W.系统性能和效率能采用Infineon公司的CoolMOS™ P7功率MOSFET进行优化.集成的突发模式功能在待机模式和非常轻负载时设计非常低的待机功耗.器件的全套保护功能包括内部超温保护(OTP),反激输出过压保护(OVP),初级边过流保护(OCP),渐入低电压保护和掉电保护,VCC过压保护,开路保护以及输入过压保护.主要用在高达130W的电池充电器,以及高达130W的适配器,打印机,PC,TV,监视器,机顶盒和音频放大器应用.本文介绍了CC80QSG主要特性, 框图,SSR控制的反激电路图,以及84W AC/DC参考设计REFICC80QSG84W1BPA主要性能和指标,多种性能测试建立图,电路图,PCB设计图和材料清单.

The ICC80QSG is a voltage mode controller for flyback topologies operating in quasi-resonant mode and valley switching DCM, to achieve high efficiency of power transfer across wide operating range.

For battery charging application, the IC offers a wide power range as well as a comprehensive set of protections. The IC is easy to design in and requires a minimum number of external components.

The gate driver current enables reasonable designs up to 130 W with state-of-the-art MOSFETs. The system performance and efficiency can be optimized using Infineon CoolMOS™ P7 power MOSFETs.

The integrated burst mode function allows designs with a very low standby power consumption during standby mode and very light loads.

The ICC80QSG flyback controller is tailored for battery charger application to meet the required performance.

CC80QSG主要特性:

• Secondary side regulation (SSR), for battery charging current control

• High efficiency and low electromagnetic interference (EMI) with quasi-resonant valley switching

• Quasi-resonant mode (QRM) operation with continuous conduction mode (CCM)-prevention and valley...