[原创]onsemi NCD57252隔离双路IGBT-MOSFET栅极驱动器解决方案

onsemi公司的NCD(V)57252/3/5/6是大电流双路隔离IGBT/MOSFET栅极驱动器,输入到每个输出的电流隔离为2.5或5kVrms,而两个输出通路间具有功能隔离.器件采用3.3V到20V偏压和输入边的信号电平,输出边则高达32V偏压.器件采用互补输入,提供不同的引脚以用于禁用和死区控制,以方便系统设计.驱动可采用宽体SOIC-16和窄体SOIC-18封装.在短路时IGBT/MOSFET栅极箝位,短传输时延具有精确的匹配,3.3V,5V和15V逻辑输入,1200V工作电压(per VDE0884−11 规范),器件具有高共模瞬态免疫力,峰值输出电流(±6.5 A*和±3.5 A*).主要用在EV充电器,马达控制,UPS,工业电源,太阳能逆变器和汽车电子应用.本文介绍了NCD57252主要特性,简化框图和高边与低边IGBT栅极驱动应用图,两路IGBT栅极驱动图,以及评估板NCD57252 EVB主要特性,多种供电应用建立图和测试建立图,电路图,材料清单和PCB设计图.

NCD(V)57252/3/5/6 are high−current dual-channel isolated IGBT/MOSFET gate drivers with 2.5 or 5 kVrms* internal galvanic isolation from input to each output and functional isolation between the two output channels. The device accepts 3.3 V to 20 V bias voltage and signal levels on the input side and up to 32 V bias voltage on the output side. The device accepts complementary inputs and offers separate pins for Disable and Dead Time control for system design convenience. Drivers are available in wide-body SOIC−16 and narrow-body SOIC−16 packages.

NCD57252主要特性:

• High Peak Output Current (±6.5 A*, ±3.5 A*)

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