[原创]ST MASTERGAN4增强型650V GaN功率晶体管解决方案

ST公司的MASTERGAN4是先进的系统级封装(SiP),集成了栅极驱动器和两个半桥配置的增强型氮化镓(GaN)功率晶体管.集成的功率GaN具有650V漏-源阻隔电压和225 mΩ的RDS(ON), IDS(MAX)为 6.5 A而嵌入的高边栅极驱动器能和容易由集成的自举二极管供电. MASTERGAN4在低压和高压驱动部分有UVLO保护,以防止功率开关工作在低效力或危险状态,而它的互锁功能避免了交叉导通条件.输入引脚的扩展范围很容易和微控制器,DSP单元和霍尔传感器接口.器件的工作温度为-40C 到125C.带滞后和下拉的3.3V到15V兼容的输入.器件还具有超温保护.主要用在开关电源,充电器和适配器以及高压PFC,DC/DC转换器和DC/AC转换器.本文介绍了MASTERGAN4主要特性,框图和应用电路,以及演示板EVALMASTERGAN4主要特性,电路图,材料清单和PCB设计图.

The MASTERGAN4 is an advanced power system-in-package integrating agate driver and two enhancement mode GaN power transistors in half bridgeconfiguration. The integrated power GaNs have 650 V drain-source blocking voltageand RDS(ON) of 225 mΩ, while the high side of the embedded gate driver can beeasily supplied by the integrated bootstrap diode.

The MASTERGAN4 features UVLO protection on both the lower and upperdriving sections, preventing the power switches from operating in low efficiencyor dangerous conditions, and the interlocking function avoids cross-conductionconditions.

The extended range of the input pins allows easy interfacing with microcontrollers,DSP units or Hall effect sensors.

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