TI公司的DRV8305-Q1是三相马达驱动用的栅极驱动器,提供三个半桥驱动器,每个能驱动高边和低边N沟MOSFET;电荷泵驱动器支持100%占空比.器件满足AEC-Q100标准,4.4-V 到45-V工作电压,栅极峰值电流1.25A和1A,工作温度–40℃到150℃,主要用在三相BLDC和PMSM马达,汽车油泵和水泵,风扇和鼓风电动机.本文介绍了DRV8305-Q1主要特性,功能框图,典型应用电路图以及DRV8305-Q1EVM汽车三相马达栅极驱动评估模块主要特性,框图,电路图和材料清单.
The DRV8305-Q1 device is a gate driver IC for three-phase motor-drive applications. The device provides three high-accuracy half-bridge drivers, each capable of driving a high-side and low-side N-channel MOSFET. A charge pump driver supports 100% duty cycle and low-voltage operation for cold crank situations. The device can tolerate load dump voltages up to 45-V.
The DRV8305-Q1 device includes three bidirectional current-shunt amplifiers for accurate low-side current measurements that support variable gain settings and an adjustable offset reference.
The DRV8305-Q1 device has an integrated voltage regulator to support an MCU or other system power requirements. The voltage regulator can be interfaced directly with a LIN physical interface to allow low-system standby and sleep currents.
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