[原创]On Semi NCx5725y系列隔离IGBT/MOSFET栅极驱动器解决方案

On Semi公司的NCx5725y系列(NCD57252,NCD57253,NCD57255, NCD57256,NCV57252, NCV57253,NCV57255, NCV57256)是大电流两路隔离IGBT/MOSFET栅极驱动器,输入到每个输出的内部电流为隔离2.5或5 kVrms,同时功能隔离在两个输出通路.器件在输入边接收3.3V到20V偏压和信号电平, 输出边高达32V偏压.器件的峰值输出电流为±6.5 A或, ±3.5 A.可配置成两路低边或两路高边或半桥驱动器.可编重叠或死区时间控制,短路时IGBT/MOSFET栅极箝位,精密匹配的短时延,所有电源的严密UVLO阈值,3.3V,5V和15V逻辑输入.1200V工作电压(per VDE0884−11规范),高共模瞬态免疫,满足汽车规范AEC−Q100和 PPAP功能,器件是无铅,无卤/无BFR,和RoHS兼容.主要用在EV充电器,马达控制,UPS,工业电源,太阳能逆变器和汽车应用.本文介绍了NCx5725y系列主要特性,简化框图和多种应用电路,以及评估板NCD57252GEVB主要特性,电路图,多种建立图,材料清单和PCB设计图和装配图.

NCx5725y are high−current two channel isolated IGBT/MOSFETgate drivers with 2.5 or 5 kVrms* internal galvanic isolation from inputto each output and functional isolation between the two outputchannels. The device accepts 3.3 V to 20 V bias voltage and signallevels on the input side and up to 32 V bias voltage on the output side.

The device accepts complementary inputs and offers separate pins forDisable and Dead Time control for system design convenience.

Drivers are available in wide body SOIC−16 and narrow bodySOIC−16 package.

NCx5725y系列主要特性:

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