[原创]Infineon 1EDF5673K单路高压增强模式GaN HEMT栅极驱动方案

Infineon公司的1EDS5663H是单路和增强隔离的高压增强模式GaN HEMT栅极驱动器.CoolGaN™和相近GaN开关在”开态”时需要连续栅极电流几个mA,而由于低阈值电压和极快开关瞬态,还需要负”关态”电压.广泛使用的RC耦合栅极驱动器满足这些要求,但是它依赖于开关动态的占空比特性和缺少负栅极驱动.Infineon公司的GaNEiceDRIVER™很容易解决了这些问题.两个输出级有零下的”关态”电平,从而消除任何的占空比依赖性.此外,差分拓扑能提供负栅极驱动而不需要负的电源.器件具有低的驱动阻抗(开态电阻0.85 Ω(源),0.35 Ω(沉)),电阻可编程稳态”开态”时的栅极电流(典型10mA),可编程负栅极电压从而完全避免虚假”开态”,单个输出电压(典型8V,浮动),共模瞬态抗扰度(CMTI) > 200 V/ns,完全满足工业应用标准JEDEC.主要用在服务器,通信和工业开关电源(SMPS),适配器和充电器电源.本文介绍了1EDF5673K主要特性,框图,2.5kW GaN”图腾柱”PFC应用电路以及CoolGaN™ 600 V半桥评估平台主要特性和指标,应用案例电路,平台电路图,材料清单和PCB设计图.

CoolGaN™ and similar GaN switches require a continuous gate current of a few mA in their "on" state. Besides,due to low threshold voltage and extremely fast switching transients, a negative "off" voltage level may beneeded. The widely used RC-coupled gate driver fulfils these requirements, however it suffers from a duty-cycledependence of switching dynamics and the lack of negative gate drive in specific situations.

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