[原创] TI LMG1020低边GaN FET驱动器解决方案

TI公司的LMG102是单个低边GaN和Si MOSFET驱动器,高达60MHz工作频率,输入脉冲宽度１ns,传输时延典型值2.5ns,上升和下降时间为400ps,7A峰值源电流和5A峰值沉电流,5V工作电压,主要用在激光雷达(LiDAR),TOF激光驱动器,面部识别,E类无线充电器,VHF谐振电源转换器,GaN同步整流器和增强现实(AR).本文介绍了LMG1020主要特性,框图和典型应用电路图以及高压评估板LMG1020-HB-EVM主要特性,框图,电路图,材料清单和PCB设计图.

The LMG1020 device is a single, low-side driverdesigned for driving GaN FETs and logic-levelMOSFETs in high-speed applications includingLiDAR, time-of-flight, facial recognition, and anypower converters involving low side drivers. Thedesign simplicity of the LMG1020 enables extremelyfast propagation delays of 2.5 nanoseconds andminimum pulse width of 1 nanosecond. The drivestrength is independently adjustable for the pull-upand pull-down edges by connecting external resistorsbetween the gate and OUTH and OUTL, respectively.

The driver features undervoltage lockout (UVLO) andovertemperature protection (OTP) in the event ofoverload or fault conditions.

0.8-mm × 1.2-mm WCSP package of LMG1020minimizes gate loop inductance and maximizespower density in high-frequency applications.

LMG102主要特性:

• Low-Side, Ultra-Fast Gate Driver for GaN andSilicon FETs..

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