[原创] ST PWD5F60高密度片上系统电源驱动解决方案

ST公司的PWD5F60是先进的电源片上系统,集成了栅极驱动器和双路半桥配置的四个N沟功率MOSFET,其RDS(ON)=1.38Ω,BVDSS=600V;驱动器工作电压10V-20V,负载电流高达1A,主要用在工业风扇和泵,烹饪罩和气体加热器,吹风机,工业驱动和工厂自动化以及电源单元.本文介绍了PWD5F60主要特性,框图和应用框图,以及评估板EVALPWD5F60主要特性和指标,电路图,材料清单和PCB设计图.

High density power driver - high voltage full bridge with integrated comparators

The PWD5F60 is an advanced power system-in package integrating gate drivers and four N-channel power MOSFETs in dual half-bridge configuration.

The PWD5F60 is an advanced power system-in-package integrating gate drivers and four N-channel power MOSFETs in a compact QFN package.

The integrated power MOSFETs have an RDS(ON) of 1.38 Ω and 600 V drain-source breakdown voltage. The embedded gate drivers feature two comparators that can be used for peak current control or overcurrent protection and integrate bootstrap diodes. This allows to effectively drive loads in a tiny space and to drastically reduce external components and bill of materials.
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