[原创] TI LMG3410氮化镓(GaN) 600V 12A功率级解决方案

TI公司的LMG3410是600V/12A单路氮化镓(GaN)功率级,在8x9mm QFN封装中包括70-mΩ 600V GaN功率晶体管和专用的驱动器.高达1MHz稳态工作,传输延迟20ns,单电源12V工作,支持25-100V/ns,集成了DC/DC转换器用来负驱动电压.具有UVLO保护,过流保护和超温保护,主要用在服务器/通信AC/DC电源,太阳能逆变器和马达驱动以及机架安装的服务器DC分布电源.本文介绍了LMG3410主要特性,简化系统框图和典型半桥应用电路图,以及评估板LMG3410-HB-EVM和LMG34XX-BB-EVM主要特性和指标,电路图,材料清单和PCB装配和布局图.

The LMG3410 Single-Channel Gallium-Nitride (GaN)Power Stage contains a 70-mΩ, 600-V GaN powertransistor and specialized driver in an 8-mm by 8-mmQFN package. Our Direct Drive architecture is usedto create a normally-off device while providing thenative switching performance of the GaN powertransistor. When the LMG3410 is unpowered, anintegrated low-voltage silicon MOSFET turns the GaNdevice off via its source. In normal operation, the lowvoltagesilicon MOSFET is held on continuously while theGaN device is gated directly from an internallygeneratednegative voltage supply.
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