[原创] ST STGAP1S gapDRIVE电隔离N－MOSFET栅极驱动解决方案

ST公司的STGAP1S gapDRIVE是电隔离N-MOSFET栅极驱动器,具有先进的保护,配置和诊断特性.驱动器驱动能力为5A,高压部分高达1500V,输入-输出延迟100ns,提供很高的PWM控制精度,主要用在600/1200V逆变器,工业驱动,DC/DC转换器,UPS设备和太阳能逆变器.本文介绍了STGAP1S gapDRIVE主要特性,框图,半桥配置应用框图以及评估板EVALSTGAP1S主要特性, 单驱动配置图,半桥驱动配置图,电路图和材料清单.

The STGAP1S gapDRIVE™ is a galvanically isolated single gate driver for N-channel MOSFETs and IGBTs with advanced protection, configuration and diagnostic features. The architecture of the STGAP1S isolates the channel from the control and the low voltage interface circuitry through true galvanic isolation.

The gate driver is characterized by 5 A capability, making the device also suitable for high power inverter applications such as motor drivers in industrial drives. The output driver section provides a rail-to-rail output with the possibility to use a negative gate driver supply.
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