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The NCP51705 driver is designed to primarily drive SiC MOSFET transistors. To achieve the lowest possible conduction losses, the driver is capable to deliver the maximum allowable gate voltage to the SiC MOSFET device. By providing high peak current during turn−on and turn−off, switching losses are also minimized. For improved reliability, dV/dt immunity and even faster turn−off, the NCP51705 can utilize its on−board charge pump to generate a user selectable negative voltage rail. For full compatibility and to minimize the complexity of the bias solution in isolated gate drive applications the NCP51705 also provides an externally accessible 5 V rail to power the secondary side of digital or high speed opto isolators. The NCP51705 offers imp..
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