[原创] NXP Kinetis KV111KW D类音频放大器参考设计

NXP公司的Kinetis KV10和KV11采用ARM Cortex-M0+内核和蔼创新的90nm薄膜存储器(TFS)闪存技术,工作频率高达75MHz,多达128KB程序闪存,多达16KB RAM,工作电压1.71到3.6 V,主要用在工业马达控制,逆变器和低端电源转换应用.本文介绍了Kinetis KV1x MCU主要特性,框图和1000W D类音频放大器参考设计主要特性,电路图和PCB元件布局图.

The Kinetis V Series KV11x MCU family is built on ARM Cortex-M0+ core and enabled by innovative 90nm thin film storage(TFS) flash process technology. The KV11x is an extension ofthe existing KV10x family providing increased memory, higherpin count, additional FTMs and a FlexCAN serial interface.

KV11x is ideal for industrial motor control applications, inverters,and low-end power conversion applications.

Kinetis KV1x MCU主要特性:

Performance
• Up to 75 MHz ARM Cortex-M0+ based core
Memories and memory interfaces
• Up to 128 KB of program flash memory
• Up to 16 KB of RAM
System peripherals
• Nine low-power modes to provide power optimizationbased on application requirements
• 8-channel DMA controller
• SWD interface and Micro Trace buffer
• Bit Manipulation Engine (BME)
• External watchdog timer
• Advanced independent clocked watchdog..

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