Rohm SCT4045DR第四代SiC MOSFET 5kW逆变器解决方案

Rohm公司的SCT4045DR是第四代沟槽架构的N沟SiC功率MOSFET,源-漏电压VDSS为750V,导通电阻为45mΩ,具有小型化和低功耗的应用. 第四代SiC MOSFET产品具有业界一流的低导通电阻而不会牺牲短路耐受时间.器件采用有驱动器端的4引脚封装,,能最大化高速开关性能. SCT4045DR具有快速开关速度和快速反向恢复,容易并联应用和简化应用,具有无铅引线镀层和RoHS兼容.连续漏-源电流为34A,脉冲漏极电流达61A.主要用在太阳能逆变器,DC/DC转换器,开关电源,电感加热和马达驱动.本文介绍了SCT4045DR主要特性和主要指标, 内部电路,以及SCT4045DR半桥评估板特性和电路图,以及5kW高效无风扇逆变器电路图,材料清单和PCB设计图.

SCT4045DR is a SiC MOSFET that contributes to miniaturization and low power consumption of applications. This is a 4th generation product that achieves industry-leading low on-resistance without sacrificing short-circuit withstand time. This is a 4-pin package type with a driver source terminal that can maximize the high-speed switching performance that is a feature of SiC MOSFETs.

SCT4045DR主要特性:

1) Low on-resistance

2) Fast switching speed

3) Fast reverse recovery

4) Easy to parallel

5) Simple to drive

6) Pb-free lead plating ; RoHS compliant

SCT4045DR应用:

・Solar inverters

・DC/DC converters

・Switch mode power supplies

・Induction heating

・Motor drives

SCT4045DR主要指标:

图1. SCT4045DR内部电路

第四代SiC MOSFET SCT4045DR半桥评估板

This user guide explains how to use the evaluation board to evaluate 4th Generation SiC MOSFETs.

SiC MOSFETs handle high voltage and high current and need to be evaluated under various conditions to determine the operating conditions for optimizing EMC noise and power supply efficiency. However, creating an appropriate evaluation environment is not an easy task. To solve this problem, we have prepared an evaluation board that allows you to easily set various...