[原创]ST MASTERGAN1 650V增强模式GaN HEMT解决方案

ST公司的MASTERGAN1是先进的功率系统级封装,集成了栅极驱动器和两个增强模式半桥配置的GaN晶体管.集成的功率GaN的RDS(ON)为150 mΩ,漏-源击穿电压为650V,IDS(MAX) = 10 A,而嵌入的高边栅极驱动器很容易有集成的自举二极管供电. MASTERGAN1器件在低边和高边驱动两部分有UVLO保护,从而阻止了功率开关工作在低效率或危险条件,内部锁住功能也避免了交叉导通的条件.输入引脚的扩展范围使得容易和微处理器,DSP单元或霍尔效应传感器接口.带延迟和下拉的3.3V到15V兼管的输入,器件采用9x9x1 mm QFN封装,工作温度-40C到125C.主要用在开关电源,充电器和适配器,高压PFC,DC/DC转换器和DC/AC转换器.UPS系统和太阳能电源.本文介绍了MASTERGAN1主要特性,框图和MASTERGAN1最大指标, 推荐工作条件,应用电路以及250W评估板EVLMG1-250WLLC主要特性和电路图.

The MASTERGAN1 is an advanced power system-in-package integrating a gatedriver and two enhancement mode GaN transistors in half‑bridge configuration.

The integrated power GaNs have RDS(ON) of 150 mΩ and 650 V drain‑sourcebreakdown voltage, while the high side of the embedded gate driver can be easilysupplied by the integrated bootstrap diode.

The MASTERGAN1 features UVLO protection on both the lower and upper drivingsections, preventing the power switches from operating in low efficiency ordangerous conditions, and the interlocking function avoids cross-conductionconditions.

The input pins extended range allows easy interfacing with microcontrollers, DSPunits or Hall effect sensors.

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