[原创]TI TIDM－02008双向高密度GaN CCM图腾柱PFC参考设计

TI公司的TIDM-02008是采用C2000™ MCU和LMG341xR070600-V 70-mΩGaN FET的双向高密度GaN晶体管CCM图腾柱PFC参考设计.具有交错3.3kW单相双向无桥CCM图腾柱PFC级,100kHz脉宽调制(PWM)开关,可编输出电压,380V DC为正常输出值,峰值效率大于98%,总谐波失真(THD)小于2%,支持powerSUITE™,便于容易设计以满足用户需求,软件频率响应分析仪(SFRA)可快速测量开路增益,PWM软件起动降低TTPL PFC的零电流尖峰.软件还支持F28004x MCU的驱动器库,当在C28x或CLA运行控制回路时可维持相同的源代码.参考设计TIDM-02008主要用在电动汽车(EV)的板上充电器,通信设备整流器,驱动,焊接和其它工业以及能量存储系统(ESS).本文主要介绍了LMG341xR070GaN晶体管主要特性,简化框图和功能框图,半双桥应用电路,以及参考设计TIDM-02008主要特性和系统指标,功率拓扑框图,电路图,材料清单和PCB设计图.

The LMG341xR070 GaN power stage with integrateddriver and protection enables designers to achievenew levels of power density and efficiency in powerelectronics systems. The LMG341xs inherentadvantages over silicon MOSFETs include ultra-lowinput and output capacitance, zero reverse recoveryto reduce switching losses by as much as 80%, andlow switch node ringing to reduce EMI. Theseadvantages enable dense and efficient topologies likethe totem-pole PFC.

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