[原创]TI UCC21732 SiC－IGBT 10A单路栅极驱动器解决方案

TI公司的UCC21732是用于SiC/IGBT的10A源/沉增强隔离的单路栅极驱动器,距主动保护,隔离的模拟检测和高的CMTI.器件工作电压高达2121V DC,同时具有先进的保护特性,业界最好的动态性能和鲁棒性.输入侧和输出侧采用SiO2电容隔离技术,支持高达1.5-kVRMS工作电压, 12.8-kVPK浪涌免疫度,隔离层寿命大于40年,低部件/部件间歪斜,大于150V/ns的共模噪音抗扰度(CMTI). UCC21732包括最新的保护特性如快速过流和短路检测,支持并联电流检测,故障报告,有源米勒箝位,输入和输出电源欠压锁住(UVLO),以优化SiC和IGBT开关性能和鲁棒性.和PWM传感器的隔离模拟能用来检测温度或电压,进一步增加了驱动器的多样性,简化系统设计,尺寸和成本.工作结温–40C 至150C.主要用在电动汽车的牵引逆变器,板上充电器和充电桩,用于HEV/ EV的DC/DC转换器,工业马达驱动,服务器,通信和工业电源以及不间断电源(UPS).本文介绍了UCC2173主要特性,功能框图,典型应用电路图以及评估板UCC21732QDWEVM-025主要特性和电性能指标,框图,电路图,多种测试建立图,材料清单和PCB设计图.

The UCC21732 is a galvanic isolated single channel gate driver designed for SiC MOSFETs and IGBTs up to 2121-V DC operating voltage with advanced protection features, best-in-class dynamic performance and robustness. UCC21732 has up to ±10-A peak source and sink current.

The input side is isolated from the output side with SiO2 capacitive isolation technology, supporting up to 1.5-kVRMS working voltage, 12.8-kVPK surge immunity with longer than 40 years Isolation barrier life, as well as providing low part-to-part skew , >150V/ns common mode noise immunity (CMTI).

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