[原创] ST STDRIVE601三相半桥高压栅极驱动器解决方案

ST公司的STDRIVE601是单片三相半桥高压栅极驱动器,采用BCD6s离线技术制造,用于N沟功率MOSFET或IGBT,适用于三相应用.所有器件的源电流和沉电流分别是350mA和200mA.采用互锁和死区功能可防止交叉导通.器件的高压可高达600V,dV/dt瞬态度端正免疫度为±50 V/ns,栅极驱动电压范围从9V到20V,整个输入-输出传输时延为85ns,所有通路匹配传输入时延,带滞后的3.3V,5V TTL/CMOS输入,集成了阴极负载二极管(自举二极管),主要用在三相马达驱动和逆变器.本文介绍了STDRIVE601主要特性,框图,典型应用框图以及三相栅极驱动器演示板EVALSTDRIVE601主要特性,电路图,材料清单和PCB设计图.

The STDRIVE601 is a high voltage devicemanufactured with BCD6s offline technology. It isa single-chip with three half-bridge gate drivers forN-channel power MOSFETs or IGBTs suitable for3-phase applications.

All device outputs can sink and source 350 mAand 200 mA respectively. Prevention from crossconduction is ensured by interlocking anddeadtime function.

The device has dedicated input pins for eachoutput and a shutdown pin. The logic inputs areCMOS/TTL compatible down to 3.3 V for easyinterfacing with control devices. Matched delaysbetween low-side and high-side sectionsguarantee no cycle distortion and allow highfrequency operation.
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