[原创] TI LMG3410R050 GaN功率放大级解决方案

摘要: TI公司的LMG3410R050是具有过流保护的600-V 50-mΩ GaN功率放大级,比硅MOSFET具有固有的优势包括超低输入和输出电容,零反向恢复以降低开关损耗达80%之多,以及低开关节点振铃以降低EMI,20ns传输时延用于MHz工作,25-100V/ns用户可调转换速率,具有强健的保护,不需要外接保护元件,主要用在高密度工业和消费类电源,多级转换器,太阳能逆变器,工业马达驱动,不间断电源(UPS)以及高压电池充电器.本文介绍了LMG3410R050主要特性, 功能框图和应用电路,以及评估板LMG3410EVM-018和LMG34xx-BB-EVM主要特性和指标,电路图,材料清单和PCB设计图.



The LMG3410R050 GaN power stage with integrated driver and protection enables designers to achieve new levels of power density and efficiency in power electronics systems. The LMG3410’s inherent advantages over silicon MOSFETs include ultra-low

input and output capacitance, zero reverse recovery to reduce switching losses by as much as 80%, and low switch node ringing to reduce EMI. These advantages enable dense and efficient topologies like the totem-pole PFC.
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