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[原创] Infineon1200V CoolSiC MOSFET评估方案

关键词:电源管理 CoolSiC MOSFET IGBT

时间:2018-01-25 10:18:35       作者:Infineon       来源:中电网

Infineon公司的评估板EVAL-IGBT-1200V-TO247PLUS是用来评估TO-247 3引脚/4引脚封装的1200V CoolSiC™ MOSFET的实验室产品,具有两种工作模式,用来研究开关特性和测量不同条件下IGBT和二极管损耗,也可以工作在连续模式,也可配置成降压或升压DC/DC转换器.本文介绍了评估板EVAL-IGBT-1200V-TO247PLUS主要特性和优势,框图,电路图和材料清单以及PCB设计图.

This application note is a user guide for the 1200V CoolSiC™ MOSFET in TO-247 3pin/4pin evaluation board. It explains the board’s hardware and provides detailed instructions on how to use it for addressing various measurement tasks. Finally, practical examples demonstrate the performance of the MOSFET.

The board described is an evaluation board dedicated for laboratory environment only. It operates at high voltages and must only be operated by qualified and skilled personnel familiar with all applicable safety standards.

The evaluation board is delivered together with spare parts and complete ocumentation in an environmentally friendly carton box as illustrated in Figure 1. As depicted, the carton box contains:

 Evaluation board EVAL-COOLSIC-MOSFET-1200V-TO247-4 (172mm x 133mm x 72mm; LxWxH)
 1200V CoolSiC™ MOSFETs IMW120R045M1 and IMZ120R045M1 ..

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