Infineon 2EDL系列产品双路600V IGBT驱动解决方案

Infineon公司的2EDL系列产品是双路IGBT驱动器,集成了MOS晶体管或IGBT控制电源,半桥配置的最大阻断电压600V,双路输出单独控制,控制逻辑和LSTTL兼容,可低至3.3V,主要用在家用电器,消费类电子,电风扇和泵,以及通用设备.本文介绍了2EDL系列产品产品亮点和特性,框图,典型应用电路,以及栅极驱动评估板EVAL-2EDL23N06PJ主要特性,功能分布图,电路图,PCB布局图,元件布局图和材料清单.
The 2EDL family contains devices, which control power devices like MOS-transistors or IGBTs with a maximum blocking voltage of +600V in half bridge configurations. Based on the used SOI-technology there is an excellent ruggedness on transient voltages. No parasitic thyristor structures are present in the device. Hence, no parasitic latch up may occur at all temperature and voltage conditions.
The two independent drivers outputs are controlled at the low-side using two different CMOS resp. LSTTL compatible signals, down up to 3.3V logic. The device includes an under-voltage detection unit with hysteresis characteristic which are optimised either for IGBT or MOSFET.
Those parts, which are designed for IGBT have asymmetric undervoltage lockout levels, which support strongly the integrated ultrafast bootstrap diode. Additionally, the offline gate clamping function provides an inherent protection of the transistors for parasitic turn-on by floating gate conditions, when the IC is not supplied via VCC.
2EDL系列主要特性:
 Thin-film-SOI-technology
 Maximum blocking voltage +600V
 Individual control circuits for both outputs
 Filtered detection of under voltage supply
 All inputs clamped by diodes
 Off line gate clamping function
 Asymmetric undervoltage lockout thresholds for high side and low side
 Qualified according to JEDEC1 (high temperature stress tests for 1000h) for target applications
2EDL系列产品产品亮点:
 Insensitivity of the bridge output to negative transient voltages up to -50V given by SOI-...