[原创]TI DRV8300 100V三相BLDC栅极驱动器解决方案

TI公司的DRV8300是100V三个半桥栅极驱动器,能驱动高边和低边N沟功率MOSFET. DRV8300D能采用外接的阴极负载二极管和外接电容产生正确的栅极驱动电压,用于高边MOSFET;而DRV8300N能采用外接的阴极负载二极管和外接电容产生正确的栅极驱动电压,用于高边MOSFET. GVDD用来产生驱动低边MOSFET的栅极电压.栅极驱动架构支持峰值高达750mA源电流和1.5-A沉电流.栅极驱动电源(GVDD)为 5-20 V,MOSFET电源(SHx)支持高达100V,支持反向和非反向INLx输入,内置防止交叉导通,通过DT引脚调整死区时间(QFN封装),固定死区时间200ns插入(TSSO P封装),支持3.3V和5V逻辑输入,20V绝对最大值,传输延迟匹配值为4ns.主要用在电动自行车, 电动滑板车和电动交通,风扇,泵和伺服驱动器,BLDC马达模块和PMSM,无绳花园电动工具和割草机,无绳真空吸尘器,无人机,机器人和RC玩具,工业和后勤机器人.本文介绍了DRV8300主要特性, DRV8300D和DRV8300N简化电路图及其框图, 应用电路图, 评估模块DRV8300Dxxx-EVM主要特性和框图,电路图,材料清单和PCB设计图.

DRV8300 is 100-V three half-bridge gate drivers, capable of driving high-side and low-side N-channel power MOSFETs. The DRV8300D generates the correct gate drive voltages using an integrated bootstrap diode and external capacitor for the highside

MOSFETs. The DRV8300N generates the correct gate drive voltages using an external bootstrap diode and external capacitor for the high-side MOSFETs.

GVDD is used to generate gate drive voltage for the low-side MOSFETs. The Gate Drive architecture supports peak up to 750-mA source and 1.5-A sink currents.

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