[原创]ST MASTERGAN5 600V增强模式GaN功率半桥驱动器解决方案

ST公司的MASTERGAN5是高功率密度两个增强模式GaN功率HEMT的600V半桥驱动器,具有先进的功率系统级封装(SiP),集成了栅极驱动器和两个半桥配置的增强模式GaN功率晶体管.集成的功率GaN具有650V漏极-源极电压和450 mΩ的RDS(ON).同时嵌入的栅极驱动器的高边很容易由集成的自举二极管进行供电.MASTERGAN5在低和高驱动部分具有UVLO功能,以防止功率开关工作在低效率或危险条件,而互锁功率避免了交叉导通的出现.输入引脚的扩展范围很容易和微控制器,DSP单元或霍尔效应传感器接口.具有滞后和下拉的3.3V到15V兼容输入.器件工作温度 -40C 到 125C,紧凑的9x9mm QFN封装.主要用在开关电源,充电器和适配器以及高压PFC,DC/DC转换器和DC/AC转换器.本文介绍了MASTERGAN5主要特性,框图,应用电路,以及演示板EVALMASTERGAN5主要特性,电路图,材料清单和PCB设计图.

High power density 600 V half-bridge driver with two enhancement mode GaN power HEMTs

The MASTERGAN5 is an advanced power system-in-package integrating agate driver and two enhancement mode GaN power transistors in half bridgeconfiguration. The integrated power GaNs have 650 V drain-source blocking voltageand RDS(ON) of 450 mΩ, while the high side of the embedded gate driver can beeasily supplied by the integrated bootstrap diode.

The MASTERGAN5 features UVLO protection on both the lower and upperdriving sections, preventing the power switches from operating in low efficiencyor dangerous conditions, and the interlocking function avoids cross-conductionconditions.

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