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[原创]TI TIDA-01604 6.6kW HEV-EV充电器参考设计

关键词:电源管理 PFC HEV/EV SiC MOSFET TI TIDA-01604

时间:2020-09-30 12:38:29       来源:中电网

TI公司的TIDA-01604是效率98.6% 6.6kW图腾柱无桥功功率因素校正(PFC)参考设计.功率级有C2000™微控制器(MCU)和SiC隔离的栅极驱动器所驱动的碳化硅(SiC) MOSFET.参考设计实施是三相交错的,工作在连续导通模式(CCM),在240V输入电压和6.6kW满功率时效率达到98.6%,C2000控制器赋能切相和自适应死区控制,以改善轻负载时的功率因素.栅极驱动器板具有增强隔离特性,能经受大于100V/ns共模瞬态抗扰度(CMTI).栅极驱动器还包含两级关断电路,可保护MOSFET在短路情况下免受电压过充的损害.可编输出电压400V到600V.主要用在HEV/EV牵引逆变器,HEV/EV板上充电器,汽车电控制单元,HEV/EV DC/DC转换器.本文介绍了参考设计TIDA-01604主要特性和系统指标,框图,电路图,材料清单和PCB设计图.

 

This reference design presents a 6.6-kW totem-pole(TTPL) bridgeless power factor correction (PFC)solution for Onboard Charger. The power stageimplements silicon carbide (SiC) MOSFETs driven bya C2000™ microcontroller (MCU) with SiC-isolatedgate drivers. The design implements three-phaseinterleaving and operates in continuous conductionmode (CCM) to achieve a 98.60% efficiency at a 240-V input voltage and 6.6-kW full power. The C2000controller enables phase shedding and adaptive deadtime

control to improve the power factor at light load.

The gate driver board (see TIDA-01605) implementsreinforced isolation and can withstand more than 100-V/ns common-mode transient immunity (CMTI). Thegate driver board also contains the two-level turnoffcircuit, ..

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