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[原创]Infineon IGT60R070D1GaN3.6kW全桥LLC DC-DC转换器解决方案

关键词:电源管理 DC/DC转换器 氮化镓 CoolGaN Infineon IGT60R070D1

时间:2020-09-28 14:52:32       来源:中电网

Infineon公司的IGT60R070D1是600V CoolGaN™氮化镓增强模式功率晶体管,具有超快的开关速度,没有反向恢复电荷,能够反向导通,低栅极电荷和低输出电荷,优越的换向坚固性,根据JEDEC标准(JESD47和JESD22)具有工业应用的资质.提高了系统效率和功率密度,更高的工作频率,降低系统成本和降低EMI.采用CoolGaN™ 600V增强型HEMT IGT60R070D1 3600W LLC DC/DC演示板能把360V到400VDC输入电压转换成调整的52V输出.IGT60R070D1主要用在工业,通信,数据中心开关电源(SMPS)以及其它电源应用.本文介绍了IGT60R070D1主要特性和优势,以及3600W LLC DC/DC演示板主要特性,简化电路和电路描述图,以及CoolGaN™ 380V/52V演示板主要电特性以及主板,52V控制板,半桥板和偏压板的电路图,材料清单和PCB设计图与装配图.

 

Gallium nitride (GaN) offers fundamental advantages over silicon. In particular, the higher critical electrical field makes it very attractive for power semiconductor devices with outstanding specific dynamic on-state resistance and smaller capacitances compared to silicon MOSFETs, which makes GaN HEMTs great for high speed switching. Not only because of the resulting power savings and total system cost reduction, it also allows a higher operating frequency, improves the power density as well as the overall system efficiency.
The most important feature of a GaN power transistor is its reverse recovery performance. As Infineons CoolGaN™ transistors have no minority carriers and no body diode they do not exhibit a reverse..

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