[原创] TI TIDA－020030SiC/IGBT绝缘栅驱动器参考设计

TI公司的TIDA-020030是采用UCC21710-Q1的SiC/IGBT绝缘栅驱动器参考设计.UCC21710-Q1是电流隔离单路栅极驱动器,设计用于高达1700V SiC MOSFET和IGBT,具有先进的保护特性,业界最好的动态性能和鲁棒性.它具有高达±10-A峰值源和沉电流.器件满足汽车应用的AEC-Q100规范.SiC MOSFET和IGBT高达2121Vpk,最大输出驱动电压(VDD-VEE)33V,CMTI大于150-V/ns,快速过流保护响应时间为270ns,内部有源米勒箝位4A,带PWM输出的隔离模拟传感器用于NTC,PTC或热二极管的温度检测和高压DC链接或相位电压,工作结温为–40℃ 到 150℃.主要用在电动汽车(EV)的动力逆变器,板上充电器和充电桩,HEV/EV的DC/DC转换器. 中电网为您整理如下详细资料，本文介绍了UCC21710-Q1主要特性,功能框图,典型应用电路图以及SiC/IGBT绝缘栅驱动器参考设计TIDA-020030主要特性,框图,电路图,材料清单和PCB设计图.

The UCC21710-Q1 is a galvanic isolated singlechannel gate driver designed for up to 1700V SiCMOSFETs and IGBTs with advanced protectionfeatures, best-in-class dynamic performance androbustness. UCC21710-Q1 has up to ±10-A peaksource and sink current.

The input side is isolated from the output side withSiO2 capacitive isolation technology, supporting up to1.5-kVRMS working voltage, 12.8-kVPK surge immunitywith longer than 40 years Isolation barrier life, as wellas providing low part-to-part skew, and >150V/ns　common mode noise immunity (CMTI).
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