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[原创] TI TIDA-010039三相SiC AC-DC转换器参考设计

关键词:电源管理 AC/DC转换器 SiC MOSFET TIDA-010039

时间:2020-02-07 11:36:27       来源:中电网

TI公司的TIDA-010039是三级三相SiC AC/DC转换器参考设计,提供了如何实现具有双向功能的三级三相基于SiC的AC/DC转换器.其高开关频率50kHz降低滤波器设计中的磁性元件尺寸,从而获得更高的功率密度. SiC MOSFET具有低开关损耗,使得更高的DC总线电压高达800V,较低开关损耗具有峰值效率大于97%.参考设计的输入为380–400 VAC峰值,DC输出为800V,在400-VAC 50或60-Hz电网连接时,最大输出功率为10-kW, 10-kVA,隔离驱动器ISO5852S具有增强的绝缘性能,用来驱动高压SiC MOSFET,而UCC5320S则用来驱动中等Si IGBT.采用AMC1301来监测负载电流,而TMS320F28379D控制卡用来数字控制.主要用在DC充电桩,电动汽车充电站功率模块,能量存储转换系统(PCS)和三相UPS.本文介绍了三相SiC AC/DC转换器参考设计TIDA-010039主要特性,框图和主要系统指标,以及电路图.

This reference design provides an overview on how to implement a three-level, three-phase, SiC-based AC/DC converter with bidirectional functionality. A high switching frequency of 50 kHz reduces the size of magnetics for the filter design and as a result a higher power density. SiC MOSFETs with low switching loss enable higher DC bus voltages of up to 800 V and lower switching losses with a peak efficiency of > 97%.

This design is configurable to work as a two-level or three-level rectifier. For design information on theDC/AC implementation, see TIDA-01606.

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