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[原创] MicrosemiMSCSICSP3/REF2 SiC SP3模块驱动器参考设计

关键词:电源管理 SiC模块 SiC MOSFET

时间:2019-05-22 11:02:40       来源:中电网

Microsemi公司的MSCSICSP3/REF2 SiC SP3模块驱动器参考设计为SP3SiC相脚模块提供了高度隔离的SiC MOSFET双栅驱动器设计案例,可配置成驱动任何时候仅有一个边和死区保护的半桥,必要时也可以配置并存驱动器.死区时间和栅极驱动电阻由用户调整以匹配用户的需求.可选择死区保护和饱和保护使得设备更容易评估,从而危险部件的风险.和SP3F标准模块兼容的半桥模块驱动器开关频率高达400 kHz,每边栅驱动功率16W,峰值输出电流30A,栅极驱动电压-5 V/+20V,±100kV/us转换速率,两个栅极驱动器的电气隔离大于2000V,具有可靠性,效率和电性能,低成本,节省空间和降低装配时间等优点,工作温度–60℃到200℃.主要用在焊接,太阳能,电感加热,医疗电子,UPS和马达控制以及开关电源(SMPS)等高可靠应用市场.本文介绍了半桥模块驱动器主要特性,框图,SiC SP3模块驱动器参考设计主要特性,设计电参数极限值以及电路图和材料清单.

This reference design provides an example of a highly isolated SiC MOSFET dual-gate driver for the SP3SiC phase leg modules. It can be configured by switches to drive in a half bridge configuration with onlyone side on at any time and with dead time protection. It can also be configured to provide concurrentdrive, if necessary. This design is intended for use with MicrosemiSiC SP3 modules. The dead time andgate drive resistance are adjusted by the user to match the requirements of the application. Optionaldead time protection and optional desaturation protection makes device evaluation easier whilelowering the risk of damaging parts.

The MSCSICSP3/REF2 reference design provides an example of a highly isolated SiC MOSFET dual-gate drive..

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