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[原创] MicrosemiMSCSICSP3/REF2 SiC SP3模块驱动器参考设计

关键词:电源管理 SiC模块 SiC MOSFET

时间:2019-05-22 11:02:40       来源:中电网

Microsemi公司的MSCSICSP3/REF2 SiC SP3模块驱动器参考设计为SP3SiC相脚模块提供了高度隔离的SiC MOSFET双栅驱动器设计案例,可配置成驱动任何时候仅有一个边和死区保护的半桥,必要时也可以配置并存驱动器.死区时间和栅极驱动电阻由用户调整以匹配用户的需求.可选择死区保护和饱和保护使得设备更容易评估,从而危险部件的风险.和SP3F标准模块兼容的半桥模块驱动器开关频率高达400 kHz,每边栅驱动功率16W,峰值输出电流30A,栅极驱动电压-5 V/+20V,±100kV/us转换速率,两个栅极驱动器的电气隔离大于2000V,具有可靠性,效率和电性能,低成本,节省空间和降低装配时间等优点,工作温度–60℃到200℃.主要用在焊接,太阳能,电感加热,医疗电子,UPS和马达控制以及开关电源(SMPS)等高可靠应用市场.本文介绍了半桥模块驱动器主要特性,框图,SiC SP3模块驱动器参考设计主要特性,设计电参数极限值以及电路图和材料清单.

This reference design provides an example of a highly isolated SiC MOSFET dual-gate driver for the SP3SiC phase leg modules. It can be configured by switches to drive in a half bridge configuration with onlyone side on at any time and with dead time protection. It can also be configured to provide concurrentdrive, if necessary. This design is intended for use with MicrosemiSiC SP3 modules. The dead time andgate drive resistance are adjusted by the user to match the requirements of the application. Optionaldead time protection and optional desaturation protection makes device evaluation easier whilelowering the risk of damaging parts.

The MSCSICSP3/REF2 reference design provides an example of a highly isolated SiC MOSFET dual-gate driver for the SiC SP3 phase leg modules. It can be configured by switches to drive in a half bridge configuration with only side on at any time and with dead time protection. It can also be configured to provide concurrent drive, if necessary. This design is intended for use with MicrosemiSiC SP3 modules.

半桥模块驱动器(和SP3F标准模块兼容)主要特性:

400 kHz maximum switching frequency
16 W of gate drive power per side
30 A peak output current
-5 V/+20 V gate drive voltage
± 100 kV/us capability
Galvanic isolation of more than 2000 V on both gate drivers
Microsemi combines a formidable array of technologies in semiconductors, packaging and automated manufacturing to produce a wide range of high-quality modules optimized for the following traits:
Reliability
Efficiency and electrical performance
Low cost
Space savings
Reduced assembly time

The readily available standard module product line spans a wide selection of circuit topologies, semiconductors including Silicon Carbide, voltage and current ratings, and packages. If you need even more flexibility or intellectual property protection, Microsemican customize a standard module with low setup cost and short lead time. Unique requirements can be met with application-specific power modules (ASPM®).

Microsemi serves a broad spectrum of industrial applications for Welding, Solar, Induction Heating, Medical, UPS, Motor Control, and SMPS markets as well as High-reliability applications for Semicap, Defense, and Aerospace markets. A wide selection of construction materials enables Microsemi to manufacture with short lead times modules with the following features:

Extended temperature range:–60℃ to 200℃
High reliability
Reduced size and weight
High-reliability testing and screening options
Microsemi’s experience and expertise in power electronic conversion bring the most effective technical support for your new development.
Isolated gate driver
Snubbers
Mix-and-match semiconductors
Short-circuit protection
Temperature and current sensing
Parameter binning

图1.半桥驱动器框图

This reference design is optimized to drive SP3 SiC MOSFET devices at high speeds with desaturationprotection. It is a base design that can be simplified depending upon the individual systemrequirements.

SiC SP3模块驱动器参考设计主要特性:

Requires only a 12 V power input
–5 V, 20 V output gate drive, jumper selectable to –5 V, 18 V
Includes an example of temperature monitoring
Galvanic isolation of more than 2000 V on both gate drivers1
Capable of 16 W of gate drive power/side
Peak gate current of up to 30 A
Maximum output current of approximately 60 A due to trace limitations
Maximum switching frequency greater than 400 kHz2
Single-ended or RS485/RS422 differential input gate control
Shoot through (short-circuit) protection
±100 kV/μs capability
Programmable dead time protection
Fault signaling
Under voltage lockout protection
Notes:

The ICs and transformer are rated to greater than 2000 V. The trace clearance rating is dependentupon the allowable contamination level and is the responsibility of the user. Note that the boardclearance around the gate transformers is low for a 2 kV design. An epoxy coating should be addedto adjacent trace if additional protection is desired.

The board has been tested to 400 kHz. Any calculation of gate-power drive must include thefrequency dependent portion of the driver IXDN630 and the ADuM4136.

图2.SiC SP3模块驱动器参考设计外形图:LED和测试点

图3.SiC SP3模块驱动器参考设计外形图:连接器
.SiC SP3模块驱动器参考设计电参数极限值:


图4.SiC SP3模块驱动器参考设计电路图(1):SELV/控制电路

图5.SiC SP3模块驱动器参考设计电路图(2):底边驱动器

图6.SiC SP3模块驱动器参考设计电路图(3):电源边和低边温度调节器

图7.SiC SP3模块驱动器参考设计电路图(4):顶边驱动器
SiC SP3模块驱动器参考设计材料清单:



详情请见:
https://www.microsemi.com/existing-parts/parts/146951
Microsemi_Dual_SiC_MOSFET_Driver_Reference_Design_Product_Brief.pdf
Microsemi_SiC_SP3_Module_Driver_Reference_Design_AN1831_C.PDF

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