TI DRV8353RS 100V三相智能栅极驱动方案

TI公司的DRV835x系列是用于三相马达的9-100V三相智能栅极驱动器,集成了用于高边和低边的三个独立半桥栅极驱动器,电荷泵和线性稳压器,以及可选择的三个电流分流放大器和350mA降压稳压器,工作电压6-95V,输出电流2.5V-75V/350mA.主要用在3相无刷DC(BLDC)马达模块,风扇,鼓风机和泵,电动自行车,电动滑板车和电动汽车,无人机,机器人遥控玩具,工厂自动化和纺织机械.本文介绍了DRV835x系列主要特性和框图,栅极驱动器框图,应用电路以及评估板DRV8353RS-EVM主要特性和电路图,材料清单与PCB设计图.
The DRV835x family of devices are integrated 100-V gate drivers for three-phase motor drive applications.
These devices decrease system component count, cost, and complexity by integrating three independent halfbridgegate drivers, charge pump and linear regulator for the high-side and low-side gate driver supply voltages,optional triple current shunt amplifiers, and an optional 350-mA buck regulator. A standard serial peripheralinterface (SPI) provides a simple method for configuring the various device settings and reading fault diagnosticinformation through an external controller. Alternatively, a hardware interface (H/W) option allows for configuringthe most commonly used settings through fixed external resistors.
The gate drivers support external N-channel high-side and low-side power MOSFETs and can drive up to 1-Asource, 2-A sink peak currents with a 25-mA average output current. The high-side gate drive supply voltage isgenerated using a doubler charge-pump architecture that regulates the VCP output to VVDRAIN + 10.5-V. The lowsidegate drive supply voltage is generated using a linear regulator from the VM power supply that regulates theVGLS output to 14.5-V. The VGLS supply is further regulated to 11-V on the GLx low-side gate driver outputs. Asmart gate-drive architecture provides the ability to dynamically adjust the output gate-drive current strengthallowing for the gate driver to control the power MOSFET VDS switching speed. This allows for the removal ofexternal gate drive resistors and diodes reduci...