[原创] TI TIDA－01606 10kW三相光伏并网逆变器参考设计

TI公司的TIDA-01606是基于SiC的输出功率10kW/10kVA的三相光伏并网逆变器参考设计,最大输入电压在800V DC和1000V DC,在400V AC 50/60Hz并网连接时最大输出功率10-kW/10-kVA,采用高压1200V SiC MOSFET全桥逆变器,峰值效率高达98.5%,满负荷时的输出电流的THD小于2%,主要用在太阳能串逆变器和太阳能中心逆变器.本文介绍了参考设计TIDA-01606主要特性和主要指标,框图,电源卡和栅驱动卡电路图与材料清单.

This reference design provides an overview on how toimplement a three-level, three-phase, SiC-basedDC/AC grid-tie inverter stage. A higher switchingfrequency of 50 kHz reduces the size of magnetics forthe filter design and as a result a higher power density.

SiC MOSFETs with switching loss ensures higher DCbus voltages of up to 1000 V and lower switchinglosses with a peak efficiency of 99%. This design isconfigurable to work as a two-level or three-levelinverter.

Modern commercial scale solar inverters are seeing innovation on two fronts, which lead to smaller, higherefficiency products on the market:

1. The move to higher voltage solar arrays
2. Reducing the size of the onboard magnetic

By increasing the voltage to 1000-V or 1500-V DC from the array, the current can be reduced to maintainthe same power levels. This reduction in current results in less copper and smaller power conductingdevices required in the design. The reduction in di/dt also reduces the stress on electrical components.However, sustained DC voltages of > 1 kV can be difficult to design to, or even find components that cansurvive it.

To compensate for the voltage stresses generated by high-voltage solar arrays, new topologies of solarinverters have been designed. Traditional half bridges block the full input voltage on each switchingdevice. By adding additional switched blocking and conduction components, the overall stress on thedevice can be significantly reduced. This reference design shows how to implement a three-levelconverter. Higher level converters are also possible, further increasing the voltage handling capability.

Additional power density in solar electronics is also being enabled by moving to higher switching speeds inthe power converters. As this design shows, even a modestly higher switching speed reduces the overallsize requirement of the output filter stage—a primary contributor to the design size.

Traditional switching devices have a limit in how quickly they can switch high voltages, or moreappropriately, the dV/dt ability of the device. This slow ramp up and down increases conduction lossbecause the device spends more time in a switching state. This increased switch time also increases theamount of dead time required in the control system to prevent shoot-through and shorts. The solution tothis has been developed in newer switching semiconductor technology like SiC and GaN devices with highelectron mobility. This reference design uses SiC MOSFETs alongside TI ’s SiC gate driver technology to demonstrate the potential increase in power density.

参考设计TIDA-01606主要特性:

• Rated Nominal and Max Input Voltage at 800-Vand 1000-V DC
• Max 10-kW/10-kVA Output Power at 400-V AC50- or 60-Hz Grid-Tie Connection
• Operating Power Factor Range From 0.7 Lag to0.7 Lead
• High-Voltage (1200-V) SiC MOSFET-Based Full-Bridge Inverter for Peak Efficiency of 98.5%
• Compact Output Filter by Switching Inverter at50 kHz
• <2% Output Current THD at Full Load
• Isolated Driver ISO5852S With Reinforced Isolationfor Driving High-Voltage SiC MOSFET andUCC5320S for Driving Middle Si IGBT
• Isolated Current Sensing Using AMC1301 for LoadCurrent Monitoring
• TMS320F28379D Control Card for Digital Control

参考设计TIDA-01606应用:

• Solar String Inverters
• Solar Central Inverters

图1.参考设计TIDA-01606外形图
参考设计TIDA-01606主要指标:


图2.参考设计TIDA-01606框图

图3.参考设计TIDA-01606电源卡电路图(1)

图4.参考设计TIDA-01606电源卡电路图(2)

图5.参考设计TIDA-01606电源卡电路图(3)

图6.参考设计TIDA-01606电源卡电路图(4)

图7.参考设计TIDA-01606电源卡电路图(5)

图8.参考设计TIDA-01606电源卡电路图(6)
参考设计TIDA-01606电源卡材料清单:


图9.参考设计TIDA-01606栅驱动卡电路图(1)

图10.参考设计TIDA-01606栅驱动卡电路图(2)
参考设计TIDA-01606栅驱动卡材料清单:

详情请见:
http://www.ti.com/lit/ug/tidue53a/tidue53a.pdf
tidrvs3.zip
tidue53a.pdf