[原创] On Semi NCP51705 SiC MOSFET驱动解决方案

On Semi公司的NCP51705是SiC MOSFET晶体管驱动器,具有最低可能的导通损耗,能给SiC MOSFET器件提供最大可能的栅极电压.由于在开态和关态提供了高峰值电流,开关损耗实现了最低化.为了改善生活可靠性,dV/dt免疫性和更快关断,NCP51705采用板上电荷泵,以产生用户可选择的负电压轨.NCP51705还提供重要的保护功能如偏压电源的欠压锁住监测和基于驱动电路结温的热关断.源和沉电流能力6A,可使用的5V基准/偏压轨,用于数字振荡器电源,可调整的欠压锁住,去饱和功能以及热关断功能(TSD).主要用来驱动SiC MOSFET晶体管,工业逆变器,马达驱动器,PFC,AC/DC和DC/DC转换器.本文介绍了NCP51705主要性,框图,低边开关配置图和半桥开关配置图,硬用电路,以及Mini 评估板NCP51705 EVB主要特性,电路图,材料清单和PCB设计图.

NCP51705 SiC Driver Evaluation Board for Existing or New PCB Designs

The NCP51705 driver is designed to primarily drive SiC MOSFET transistors. To achieve the lowest possible conduction losses, the driver is capable to deliver the maximum allowable gate voltage to the SiC MOSFET device. By providing high peak current during turn−on and turn−off, switching losses are also minimized. For improved reliability, dV/dt immunity and even faster turn−off, the NCP51705 can utilize its on−board charge pump to generate a user selectable negative voltage rail.
..

查看全文